晶体管, MOSFET, N沟道, 7.4 A, 700 V, 0.86 ohm, 10 V, 3 V
Description:
CoolMOS™ CE is a technology platform of ´s market leading high voltage power MOSFET designed according to the superjunction principle SJ and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Summary of Features:
Benefits:
Target Applications:
针脚数 3
漏源极电阻 0.86 Ω
极性 N-CH
耗散功率 68 W
阈值电压 3 V
漏源极电压Vds 700 V
漏源击穿电压 700 V
连续漏极电流Ids 7.4A
上升时间 5.2 ns
输入电容Ciss 328pF @100VVds
下降时间 13.6 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 68000 mW
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
宽度 2.38 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 无铅
ECCN代码 EAR99