IRLR2703

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IRLR2703概述

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Logic-Level Gate Drive

Ultra Low On-Resistance

Surface Mount

Straight Lead IRLU2703

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

IRLR2703中文资料参数规格
技术参数

额定电压DC 30.0 V

额定电流 23.0 A

极性 N-Channel

耗散功率 38.0 W

产品系列 IRLR2703

漏源极电压Vds 30 V

漏源击穿电压 30.0 V

连续漏极电流Ids 23.0 A

上升时间 140 ns

输入电容Ciss 450pF @25VVds

额定功率Max 45 W

封装参数

安装方式 Surface Mount

封装 TO-252

外形尺寸

封装 TO-252

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IRLR2703
型号: IRLR2703
制造商: International Rectifier 国际整流器
描述:30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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