先进的功率MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10㎂ Max. @ VDS= 200V
Low RDSON : 0.333 Typ.
立创商城:
N沟道 200V 6.5A