NXP PUMD9 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V/-50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V/-50V 集电极连续输出电流IC Collector CurrentIC| 100mA/-100mA Q1基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio| 0.21 Q2基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio| 0.21 直流电流增益hFE DC Current GainhFE| 100 截止频率fT Transtion FrequencyfT| 230MHz/180MHz 耗散功率Pc Power Dissipation| 300mW/0.3W Description & Applications| Features • NPN/PNP resistor-equipped transistors; • 100 mA output current capability • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs 描述与应用| 特点 •NPN/ PNP电阻配备; •100 mA的输出电流能力 •减少了元件数量 •内置偏置电阻 •减少取放成本 •简化电路设计 •通过AEC-Q101标准 应用 •低电流外设驱动程序 •通用晶体管数字应用的更换 •控制IC投入