NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
brings you the solution to your high-voltage BJT needs with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 6000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 7 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JANTXV2N5672 | Microsemi 美高森美 | 下载 |
| JANTX2N2905A | Microsemi 美高森美 | 下载 |
| JANTX2N2907AUA | Microsemi 美高森美 | 下载 |
| JANTX2N2920 | Microsemi 美高森美 | 下载 |
| JANTX1N5305-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019 | Microsemi 美高森美 | 下载 |
| JANTX1N5310-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019S | Microsemi 美高森美 | 下载 |
| JANTX1N5314-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5312UR-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5314UR-1 | Microsemi 美高森美 | 下载 |