ON SEMICONDUCTOR BC817-40LT3G Bipolar BJT Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE 新
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
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|---|---|---|
| BC817-40LT3G | ON Semiconductor 安森美 | 下载 |
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| BC817-16LT3G | ON Semiconductor 安森美 | 下载 |