SI1012R-T1-GE3

VISHAY  SI1012R-T1-GE3  晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV

The is a 1.8VGS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.

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2000V Gate-source ESD protected

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High-side switching

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Low ON-resistance

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Low threshold

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10ns Fast switching speed

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Halogen-free

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Ease in driving switches

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Low offset voltage

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Low-voltage operation

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High-speed circuits

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Low battery voltage operation