SPD04P10PGBTMA1

P沟道 100V 4A

Summary of Features:

.

Enhancement mode

.

Avalanche rated

.

Pb-free lead plating; RoHS compliant 

.

Small Signal packages approved to AEC Q101

欧时:
INFINEON MOSFET SPD04P10PGBTMA1

得捷:
MOSFET P-CH 100V 4A TO252-3

立创商城:
P沟道 100V 4A

贸泽:
MOSFET P-Ch -100V -4A DPAK-2

艾睿:
Make an effective common gate amplifier using this SPD04P10PGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 38000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology.

安富利:
Trans MOSFET P-CH 100V 4A 3-Pin2+Tab TO-252 T/R

TME:
Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3

Verical:
Trans MOSFET P-CH 100V 4A Automotive 3-Pin2+Tab DPAK T/R