RFD14N05SM9A

FAIRCHILD SEMICONDUCTOR  RFD14N05SM9A  晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 10 V, 4 V

The is a N-channel Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.

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Temperature compensating PSPICE® model

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Peak current vs. pulse width curve

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UIS Rating curve