单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
CoolMOS™C3 功率 MOSFET
得捷:
MOSFET N-CH 900V 6.9A TO220-FP
欧时:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPA90R800C3XKSA1, 6.9 A, Vds=900 V, 3引脚 TO-220FP封装
贸泽:
MOSFET LOW POWER_LEGACY
艾睿:
Create an effective common drain amplifier using this IPA90R800C3XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 33000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
富昌:
Single N-Channel 900 V 0.8 Ohm 42 nC CoolMOS™ Power Mosfet - TO-220-3FP
Chip1Stop:
Trans MOSFET N-CH 900V 6.9A 3-Pin3+Tab TO-220FP Tube
TME:
Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Verical:
Trans MOSFET N-CH 900V 6.9A 3-Pin3+Tab TO-220FP Tube
型号 | 品牌 | 下载 |
---|---|---|
IPA90R800C3XKSA1 | Infineon 英飞凌 | 下载 |
IPA90R1K2C3XKSA1 | Infineon 英飞凌 | 下载 |
IPA90R1K0C3XKSA1 | Infineon 英飞凌 | 下载 |
IPA90R500C3XKSA1 | Infineon 英飞凌 | 下载 |
IPA90R340C3XKSA1 | Infineon 英飞凌 | 下载 |
IPA90R340C3 | Infineon 英飞凌 | 下载 |
IPA90R800C3 | Infineon 英飞凌 | 下载 |
IPA90R1K2C3 | Infineon 英飞凌 | 下载 |
IPA90R1K0C3 | Infineon 英飞凌 | 下载 |
IPA90R500C3 | Infineon 英飞凌 | 下载 |