M29F200BB70N6T

NOR Flash Parallel 5V 2Mbit 256K/128K x 8Bit/16Bit 70ns 48Pin TSOP T/R

* Single 5V±10% supply voltage for Program, Erase and Read operations * Access time: 45, 50, 70, 90ns * Programming time * 8µs per Byte/Word typical * 7 memory blocks * 1 Boot Block Top or Bottom location * 2 parameter and 4 main blocks * Program/Erase controller * Embedded Byte/Word Program algorithm * Embedded Multi-Block/Chip Erase algorithm * Status Register polling and toggle bits * Ready/Busy output pin * Erase Suspend and Resume modes * Read and Program another block during Erase Suspend * Unlock Bypass Program command * Faster Production/Batch Programming * Temporary Block Unprotection mode * Low power consumption * Standby and Automatic Standby * 100,000 Program/Erase cycles per block * 20 years data retention * Defectivity below 1 ppm/year * Electronic Signature * Manufacturer code: 0020h * Bottom Device code: M29F200BB: 00D4h * ECOPACK® packages available