FQD7N10LTM

FQD7N10LTM概述

FAIRCHILD SEMICONDUCTOR  FQD7N10LTM  晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

.
100% Avalanche tested
.
4.6nC Typical low gate charge
.
12pF Typical low Crss
FQD7N10LTM数据文档
型号 品牌 下载
FQD7N10LTM

Fairchild 飞兆/仙童

下载
FQD7P06TM

Fairchild 飞兆/仙童

下载
FQD7P06TM_F080

Fairchild 飞兆/仙童

下载
FQD7N20LTM

Fairchild 飞兆/仙童

下载
FQD7P20TM

Fairchild 飞兆/仙童

下载
FQD7N30TM

Fairchild 飞兆/仙童

下载
FQD7N30TF

Fairchild 飞兆/仙童

下载
FQD7N10TM

Fairchild 飞兆/仙童

下载
FQD7P06TF

Fairchild 飞兆/仙童

下载
FQD7N20LTF

Fairchild 飞兆/仙童

下载
FQD7N20TF

Fairchild 飞兆/仙童

下载

锐单商城 - 一站式电子元器件采购平台