FQT7N10TF

FQT7N10TF概述

FAIRCHILD SEMICONDUCTOR  FQT7N10TF  晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V

The is a N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

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100% Avalanche tested
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5.8nC Typical low gate charge
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10pF Typical low Crss
FQT7N10TF数据文档
型号 品牌 下载
FQT7N10TF

Fairchild 飞兆/仙童

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FQT7N10LTF

Fairchild 飞兆/仙童

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FQT7N10L

Fairchild 飞兆/仙童

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FQT7N10

Fairchild 飞兆/仙童

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