IXKC15N60C5

MOSFET N-CH 600V 15A ISOPLUS220

Electrically isolated back surface

2500 V electrical isolation

N-Channel Enhancement Mode

Low RDSon, high VDSS MOSFET

Ultra low gate charge

Features

• Silicon chip on Direct-Copper-Bond substrate

\- high power dissipation

\- isolated mounting surface

\- 2500 V electrical isolation

 - low drain to tab capacitance < 30 pF

• Fast CoolMOS™ power MOSFET 4th generation

 - high blocking capability

\- lowest resistance

 - avalanche rated for unclamped  inductive switching UIS

 - low thermal resistance   due to reduced chip thickness

• Enhanced total power density

Applications

• Switched mode power suppliesSMPS

• Uninterruptible power supplies UPS

• Power factor correction PFC

• Welding

• Inductive heating

• PDP and LCD adapter