2N6426G

达林顿晶体管NPN硅 Darlington Transistors NPN Silicon

brings you their latest NPN Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@0.5mA@500mA V. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 20000@10mA@5 V|20000@500mA@5V|30000@100mA@5V. It has a maximum collector emitter saturation voltage of 1.2@0.5mA@50mA|1.5@0.5mA@500mA V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 12 V.