Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3Pin3+Tab TO-220AB Tube
This IGBT transistor from Technologies will work perfectly in your circuit. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 28000 mW. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.
型号 | 品牌 | 下载 |
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IGP01N120H2XKSA1 | Infineon 英飞凌 | 下载 |
IGP06N60TXKSA1 | Infineon 英飞凌 | 下载 |
IGP03N120H2 | Infineon 英飞凌 | 下载 |
IGP06N60T | Infineon 英飞凌 | 下载 |
IGP01N120H2 | Infineon 英飞凌 | 下载 |
IGP03N120H2XKSA1 | Infineon 英飞凌 | 下载 |