双N沟道增强型MOSFET Dual N-Channel Enhancement Mode MOSFET
General Description
These N-Channel Enhancement Mode MOSFETs are produced using Semiconductor"s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
5.0 A, 30 V. RDSON = 0.050 Ω @ VGS = 10 V
RDSON = 0.080 Ω @ VGS = 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
Applications
Battery switch
Load switch
Motor controls
| 型号 | 品牌 | 下载 |
|---|---|---|
| SI9936DY | Fairchild 飞兆/仙童 | 下载 |
| SI9933ADY-T1 | Vishay Semiconductor 威世 | 下载 |
| SI9926ADY | Vishay Semiconductor 威世 | 下载 |
| SI9934DY | Fairchild 飞兆/仙童 | 下载 |
| SI9933ADY | Fairchild 飞兆/仙童 | 下载 |
| SI9926DY | Fairchild 飞兆/仙童 | 下载 |
| SI9945DY | Fairchild 飞兆/仙童 | 下载 |
| SI9986DY | Vishay Semiconductor 威世 | 下载 |
| SI9910DJ-E3 | Vishay Semiconductor 威世 | 下载 |
| SI9912DY-T1-E3 | Vishay Semiconductor 威世 | 下载 |
| SI9913DY-T1-E3 | Vishay Semiconductor 威世 | 下载 |