双P沟道PowerTrench MOSFET Dual P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V.
Features
· –5 A, –20 V, RDSON = 75 mW @ VGS = –4.5 V
RDSON = 105 mW @ VGS = –3.0 V
RDSON = 115 mW @ VGS = –2.7 V
· Extended VGSS range ±12V for battery applications
· Low gate charge
· High performance trench technology for extremely
low RDSON
· High power and current handling capability
Applications
· Load switch
· Motor drive
· DC/DC conversion
· Power management
| 型号 | 品牌 | 下载 |
|---|---|---|
| SI9933ADY | Fairchild 飞兆/仙童 | 下载 |
| SI9933ADY-T1 | Vishay Semiconductor 威世 | 下载 |
| SI9936DY | Fairchild 飞兆/仙童 | 下载 |
| SI9926ADY | Vishay Semiconductor 威世 | 下载 |
| SI9934DY | Fairchild 飞兆/仙童 | 下载 |
| SI9926DY | Fairchild 飞兆/仙童 | 下载 |
| SI9945DY | Fairchild 飞兆/仙童 | 下载 |
| SI9986DY | Vishay Semiconductor 威世 | 下载 |
| SI9910DJ-E3 | Vishay Semiconductor 威世 | 下载 |
| SI9912DY-T1-E3 | Vishay Semiconductor 威世 | 下载 |
| SI9913DY-T1-E3 | Vishay Semiconductor 威世 | 下载 |