IXFT36N50P

IXFT36N50P概述

Trans MOSFET N-CH 500V 36A 3Pin2+Tab TO-268

表面贴装型 N 通道 36A(Tc) 540W(Tc) TO-268AA


得捷:
MOSFET N-CH 500V 36A TO268


贸泽:
MOSFET 500V 36A


艾睿:
Create an effective common drain amplifier using this IXFT36N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 540000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


Chip1Stop:
Trans MOSFET N-CH 500V 36A 3-Pin2+Tab TO-268


Verical:
Trans MOSFET N-CH 500V 36A 3-Pin2+Tab TO-268


DeviceMart:
MOSFET N-CH 500V 36A TO-268 D3


IXFT36N50P数据文档
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IXFT36N50P

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