PSMN1R7-30YL

NXP  PSMN1R7-30YL  晶体管, MOSFET, N沟道, 100 A, 30 V, 1.29 mohm, 10 V, 1.7 V

The is a N-channel logic level MOSFET with advanced TrenchMOS technology provides low RDS ON and low gate charge. It is designed and qualified for use in a wide range of It is designed and qualified for use in a wide range of DC-to-DC converters, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.

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Improved mechanical and thermal characteristics

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High efficiency gains in switching power converters

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LFPAK provides maximum power density in a power SO8 package

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-55 to 175°C Junction temperature range