MB85R4002ANC-GE1

FUJITSU  MB85R4002ANC-GE1  芯片, 存储器, FRAM, 4MB, 120NS, TSOP-48

The is a 4MB Ferroelectric Random Access Memory FRAM chip consisting of 262144 words x 16-bit of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4002A can be used for 10¹⁰ read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E²PROM. The MB85R4002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

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Data retention - 10 years

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Operating power supply voltage - 3 to 3.6V

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Low power consumption