SKM100GB12T4G数据手册PDF_SKM100GB12T4G中文资料-锐单商城

SKM100GB12T4G概述

SEMIKRON SKM100GB12T4G IGBT Array & Module Transistor, Dual NPN, 154A, 1.85V, 1.2kV, Module

**Features:

* IGBT4 = 4. Generation Trench IGBT

* VCEsat with Positive Temperature Coefficient

* High short circuit Capability, Self Limiting to 6 × ICNOM

* Electronic Welders at fSW Up-to-20 kHz

**Applications:**

* AC Inverter Drives

* UPS

* Electronic Welders at fSW Up-to-20 kHz

艾睿:
Trans IGBT Module N-CH 1200V 154A 7-Pin

Allied Electronics:
IGBT halfbridge - trench

TME:
IGBT half-bridge; Urmax:1.2kV; Ic:118A; Ifsm:300A; SEMITRANS3

Newark:
# SEMIKRON SKM100GB12T4G IGBT Array & Module Transistor, Dual NPN, 154 A, 1.85 V, 1.2 kV, Module

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