STU11NM60ND

STU11NM60ND概述

N沟道600V - 0.37Ω - 10A - FDmesh ™II功率MOSFET I2PAK , TO- 220 , TO- 220FP , IPAK , DPAK N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description

The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced on resistance and fast switching with an intrinsic fast recovery body diode.It is therefore strongly recommended for bridge topologies, in particular

 

■ The worldwide best RDSon
.
area amongst the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities

STU11NM60ND数据文档
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