IRFR3910TRLPBF

MOSFET, Power; N-Ch; VDSS 100V; RDSON 0.115Ω; ID 16A; D-Pak TO-252AA; PD 79W

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version IRFU series is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

**Features:**

* Ultra Low On-Resistance

* Surface Mount IRFR3910

* Straight Lead IRFU3910

* Advanced Process Technology

* Fast Switching

* Fully Avalanche Rated