MJD253

互补硅塑料功率晶体管 Complementary Silicon Plastic Power Transistor

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

Features

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Collector-Emitter Sustaining Voltage

VCEOsus = 100 Vdc Min @ IC = 10 mAdc

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High DC Current Gain

hFE = 40 Min @ IC= 200 mAdc

hFE= 15 Min @ IC = 1.0 Adc

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Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix

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Straight Lead Version in Plastic Sleeves "-1" Suffix

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Lead Formed Version in 16 mm Tape and Reel "T4" Suffix

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Low Collector-Emitter Saturation Voltage -

VCEsat = 0.3 Vdc Max @ IC = 500 mAdc

VCEsat = 0.6 Vdc Max @ IC = 1.0 Adc

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High Current-Gain-Bandwith Product -

fT = 40MHz Min @ IC = 100 mAdc

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Annular Construction for Low Leakage -

ICBO = 100 nAdc @ Rated VCB

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NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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These are PbFree Packages