MOSFET, Power; N-Ch; VDSS 55V; RDSON 2.6Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20
Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety
of other applications.
**Features**:
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed Up to Tj Max.
* Lead-Free
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