硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance
RDSon = 0.325 Ω typ. at ID = 9.5 A, VGS = 10 V, Ta = 25 °C
• Low leakage current
• High speed switching
Win Source:
MOSFET N-CH 500V 19A TO220
| 型号 | 品牌 | 下载 |
|---|---|---|
| RJK5014DPP | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5030DPD-00#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5031DPD-00#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5026DPP-E0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5030DPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5026DPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5033DPD-00#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5035DPP-E0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5012DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5013DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJK5014DPP-E0#T2 | Renesas Electronics 瑞萨电子 | 下载 |