MSB709-RT1G

PNP通用放大器晶体管表面贴装 PNP General Purpose Amplifier Transistor Surface Mount

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -60V

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集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −45V

集电极连续输出电流ICCollector CurrentIC| −100mA/-0.1A

截止频率fTTranstion FrequencyfT|

直流电流增益hFEDC Current GainhFE| 210~340

管压降VCE（sat）Collector-Emitter SaturationVoltage| −500mV/-0.5V

耗散功率PcPoWer Dissipation| 200mW/0.2W

Description & Applications| PNP silicon general purpose amplifier Transistor Feature Pb−Free Package is Available

描述与应用| PNP硅通用放大器 特点 无铅包装是可用