CSD16570Q5BT

TEXAS INSTRUMENTS  CSD16570Q5BT  晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V

N 通道 NexFET™ 功率 MOSFET，Texas Instruments

得捷:
MOSFET N-CH 25V 100A 8VSON

立创商城:
CSD16570Q5BT

德州仪器TI:
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm

欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD16570Q5BT, 456 A, Vds=25 V, 8引脚 VSON-CLIP封装

贸泽:
MOSFET 25V NCH NexFET Pwr MOSFET

e络盟:
晶体管, MOSFET, N沟道, 100 A, 25 V, 490 µohm, 10 V, 1.5 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments&s; CSD16570Q5BT power MOSFET can provide a solution. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology.

安富利:
Trans MOSFET N-CH 25V 59A 8-Pin VSON T/R

TME:
Transistor: N-MOSFET; unipolar; 25V; 100A; 195W; VSON-CLIP8 5x6mm

Verical:
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R

Newark:
# TEXAS INSTRUMENTS  CSD16570Q5BT  MOSFET Transistor, N Channel, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V