RN1427TE85LF

RN1427TE85LF概述

Trans Digital BJT NPN 50V 800mA 200mW 3Pin S-Mini T/R

Thanks to , easily integrate NPN digital transistors into digital signal processing circuits. This product"s maximum continuous DC collector current is 800 mA, while its minimum DC current gain is 90@100mA@1 V. It has a maximum collector emitter saturation voltage of 0.25@2mA@50mA|0.25@1mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

RN1427TE85LF数据文档
型号 品牌 下载
RN1427TE85LF

Toshiba 东芝

下载
RN142ZST2R

ROHM Semiconductor 罗姆半导体

下载
RN141STE61

ROHM Semiconductor 罗姆半导体

下载
RN142STE61

ROHM Semiconductor 罗姆半导体

下载
RN142GT2R

ROHM Semiconductor 罗姆半导体

下载
RN142VTE-17

ROHM Semiconductor 罗姆半导体

下载
RN141GT2R

ROHM Semiconductor 罗姆半导体

下载
RN142ZS8ATE61

ROHM Semiconductor 罗姆半导体

下载
RN142ZS12ATE61

ROHM Semiconductor 罗姆半导体

下载
RN1406TE85L,F

Toshiba 东芝

下载
RN1401T5LFT

Toshiba 东芝

下载

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司