BGS8L3UK/WLCSP6/REEL 13in Q1/T1
Overview
The BGS8L3UK is a Low Noise Amplifier LNA with bypass switch for LTE receiver applications, available in a Wafer-Level Chip-Scale Package WLCSP. The BGS8L3UK requires one external matching inductor.
The BGS8L3UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex FDD systems. When receive signal strength is sufficient, the BGS8L3UK can be switched off to operate in bypass mode at a 1 µA current, to lower power consumption.
The BGS8L3UK is optimized for 720 MHz to 960 MHz.
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## Features
* Operating frequency from 720 MHz to 960 MHz
* Noise figure NF = 0.9 dB
* Gain 15 dB
* High input 1 dB compression point of -3.5 dBm
* Bypass switch insertion loss of -1.8 dB
* IP3i of 0.5 dBm
* Supply voltage 1.5 V to 3.1 V
* Integrated supply decoupling capacitor
* Optimized performance at a supply current of 5.7 mA
* Bypass mode current consumption < 1 µA
* Integrated temperature stabilized bias for easy design
* Requires only one input matching inductor
* Input and output AC coupled
* ESD protection on all pins HBM > 2 kV
* Integrated matching for the output
* Extremely small Wafer-Level Chip-Scale Package WLCSP 0.69 mm x 0.44 mm x 0.2mm; 6 solder bumps; 0.252 mm / 0.260 mm bump pitch
* 180 GHz transit frequency - SiGe:C technology
* Moisture sensitivity level of 1
## Features