SRAM Chip Async Single 3.3V 2M-bit 128K x 16 10ns 44Pin TSOP-II
DESCRIPTION
The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
FEATURES
• High-speed access time: 8, 10 ns
• Operating Current: 50mA typ.
• Stand by Current: 700µA typ.
• TTL and CMOS compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
| 型号 | 品牌 | 下载 |
|---|---|---|
| IS61LV12816L-10TI | Integrated Silicon SolutionISSI | 下载 |
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| IS61WV6416BLL-12TL | Integrated Silicon SolutionISSI | 下载 |
| IS61C1024-15J | Integrated Silicon SolutionISSI | 下载 |
| IS61LV256-15T | ICSI 矽成 | 下载 |
| IS61C1024AL-12TI | Integrated Silicon SolutionISSI | 下载 |
| IS61C6416AL-12TI | Integrated Silicon SolutionISSI | 下载 |
| IS61LV6416-10TI | Integrated Silicon SolutionISSI | 下载 |
| IS61WV25616BLL-10BI-TR | Integrated Silicon SolutionISSI | 下载 |
| IS61WV25616BLL-10BI | Integrated Silicon SolutionISSI | 下载 |
| IS61WV5128BLL-10BI | Integrated Silicon SolutionISSI | 下载 |