MUBW15-06A7

MUBW15-06A7概述

Trans IGBT Module N-CH 600V 25A 100000mW 24Pin E2-Pack

The infineon IGBT module from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 100000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a hex configuration. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 125 °C.


得捷:
IGBT MODULE 600V 25A 100W E2


贸泽:
Discrete Semiconductor Modules 15 Amps 600V


艾睿:
Trans IGBT Module N-CH 600V 25A 24-Pin E2-Pack


MUBW15-06A7数据文档
型号 品牌 下载
MUBW15-06A7

IXYS Semiconductor

下载
MUBW35-06A6

IXYS Semiconductor

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MUBW30-12E6K

IXYS Semiconductor

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MUBW35-12E7

IXYS Semiconductor

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MUBW15-06A6

IXYS Semiconductor

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MUBW10-06A6

IXYS Semiconductor

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MUBW50-12E8

IXYS Semiconductor

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MUBW15-12A6

IXYS Semiconductor

下载
MUBW25-06A6

IXYS Semiconductor

下载
MUBW30-12A6

IXYS Semiconductor

下载
MUBW75-12T8

IXYS Semiconductor

下载

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