4Mb, High-Speed/Low Power, Async, 512K x 8, 8ns/3.3V, or 10ns/2.4V-3.6V, 36 Ball mBGA 8x10 mm, RoHS
SRAM - Asynchronous Memory IC 4Mb 512K x 8 Parallel 10ns 36-TFBGA 6x8
得捷:
IC SRAM 4MBIT PARALLEL 36TFBGA
立创商城:
IS61WV5128BLL 10BLI
艾睿:
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 36-Pin Mini-BGA
Chip1Stop:
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin Mini-BGA
Verical:
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin Mini-BGA
Win Source:
IC SRAM 4MBIT 10NS 36MINIBGA
| 型号 | 品牌 | 下载 |
|---|---|---|
| IS61WV5128BLL-10BLI | Integrated Silicon SolutionISSI | 下载 |
| IS61LV256AL-10TL | Integrated Silicon SolutionISSI | 下载 |
| IS61WV6416BLL-12TL | Integrated Silicon SolutionISSI | 下载 |
| IS61C1024-15J | Integrated Silicon SolutionISSI | 下载 |
| IS61LV256-15T | ICSI 矽成 | 下载 |
| IS61C1024AL-12TI | Integrated Silicon SolutionISSI | 下载 |
| IS61C6416AL-12TI | Integrated Silicon SolutionISSI | 下载 |
| IS61LV6416-10TI | Integrated Silicon SolutionISSI | 下载 |
| IS61WV25616BLL-10BI-TR | Integrated Silicon SolutionISSI | 下载 |
| IS61WV25616BLL-10BI | Integrated Silicon SolutionISSI | 下载 |
| IS61WV5128BLL-10BI | Integrated Silicon SolutionISSI | 下载 |