Trans IGBT Chip N-CH 600V 40A 178500mW 3Pin3+Tab TO-3P
This fast-switching IGBT transistor from Renesas will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 178500 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
得捷:
IGBT 600V 40A 178.5W TO-3P
艾睿:
Trans IGBT Chip N-CH 600V 40A 3-Pin3+Tab TO-3P
DeviceMart:
IGBT 600V 40A 178.5W TO-3P
| 型号 | 品牌 | 下载 |
|---|---|---|
| RJP6085DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60F5DPK-01#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60F0DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60D0DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60D0DPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP6085DPN-00#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60D0DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60V0DPM-00#T1 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60F0DPM-00#T1 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60D0DPM-00#T1 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60F5DPM-00#T1 | Renesas Electronics 瑞萨电子 | 下载 |