FCU900N60Z

FAIRCHILD SEMICONDUCTOR  FCU900N60Z  功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V

Description

SuperFET®II is, ’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

• 675V @TJ = 150oC

• Max. RDSon = 900mΩ

• Ultra Low Gate Charge Typ. Qg = 13nC

• Low Effective Output Capacitance Typ. Coss.eff = 49pF

• 100% Avalanche Tested

• ESD Improved Capacity