BUK763R8-80E数据手册PDF_BUK763R8-80E中文资料-锐单商城

BUK763R8-80E概述

NXP BUK763R8-80E 晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0031 ohm, 10 V, 3 V

The is a N-channel standard level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

.: Repetitive avalanche rated

.: Suitable for thermally demanding environments due to 175°C rating

.: True standard level gate with VGS th rating of greater than 1V at 175°C

.: -55 to 175°C Junction temperature range

BUK763R8-80E详细参数

BUK763R8-80E数据文档

型号	品牌	下载
BUK763R8-80E	NXP 恩智浦	下载
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