IPP084N06L3GXKSA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP084N06L3GXKSA1, 50 A, Vds=60 V, 3引脚 TO-220封装

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP084N06L3GXKSA1, 50 A, Vds=60 V, 3引脚 TO-220封装

立创商城:
N沟道 60V 50A

得捷:
MOSFET N-CH 60V 50A TO220-3

贸泽:
MOSFET MV POWER MOS

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; IPP084N06L3GXKSA1 power MOSFET is for you. Its maximum power dissipation is 79000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

Verical:
Trans MOSFET N-CH 60V 50A 3-Pin3+Tab TO-220 Tube

Win Source:
MOSFET N-CH 60V 50A TO-220-3