DG303BDJ-E3

DG303BDJ-E3概述

VISHAY  DG303BDJ-E3  模拟开关, 双通道, SPDT, 2 放大器, 50 ohm, ± 15V, DIP, 14 引脚

The is a single-pole double-throw monolithic CMOS Switch for precision applications where low leakage switching combined with low power consumption are required. Designed on the CMOS process, this switch is latch-up proof and is designed to block up to 30V peak-to-peak when OFF. In the ON condition the switch conducts equally well in both directions and minimize error conditions with their low ON-resistance. This switch is ideal for battery powered applications without sacrificing switching speed. Designed for break-before-make switching action, this device is CMOS and quasi TTL compatible.

.
An epitaxial layer prevents latch-up
.
Single supply operation
.
Full rail-to-rail analogue signal range
.
Low signal error
.
Low power dissipation
DG303BDJ-E3数据文档
型号 品牌 下载
DG303BDJ-E3

Vishay Semiconductor 威世

下载
DG303ACJ+

Maxim Integrated 美信

下载
DG3000DB-T1

Vishay Semiconductor 威世

下载
DG305ACWE+

Maxim Integrated 美信

下载
DG308ACY+

Maxim Integrated 美信

下载
DG308ADY+

Maxim Integrated 美信

下载
DG301ACWE+T

Maxim Integrated 美信

下载
DG309AK/883B

Maxim Integrated 美信

下载
DG309DY+T

Maxim Integrated 美信

下载
DG308ACY+T

Maxim Integrated 美信

下载
DG309CY+

Maxim Integrated 美信

下载

锐单商城 - 一站式电子元器件采购平台