NXP PBSS5140U 单晶体管 双极, 通用, PNP, 40 V, 250 mW, 1 A, 300 hFE
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −40V 集电极连续输出电流ICCollector CurrentIC| -1A 截止频率fTTranstion FrequencyfT| 150MHz 直流电流增益hFEDC Current GainhFE| 300~800 管压降VCE（sat）Collector-Emitter SaturationVoltage| −500mV/-0.5V 耗散功率PcPoWer Dissipation| 350mW/0.35W Description & Applications| 40 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Enhanced performance over SOT23 1A standard packaged transistor. APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply line switching circuits • Battery driven equipment mobile phones, video cameras and hand-held devices. 描述与应用| 40伏的低VCE（sat）的PNP 特点 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性，由于产生的热量减少 •增强的性能超过SOT231A标准包装的晶体管。 应用 •通用开关和静音 •LCD背照明 •供电线路开关电路 •电池驱动设备（手机，摄像机和手持设备）。