NSBA114YDXV6T1G

NSBA114YDXV6T1G概述

NSB 系列 50 V 100 mA 47 kOhm PNP 双 偏置电阻晶体管 - SOT-563

Are you looking to build a digital signal processing device? The PNP digital transistor, developed by , can provide a solution. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

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NSBA114YDXV6T1G

ON Semiconductor 安森美

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NSBA143ZDXV6T1G

ON Semiconductor 安森美

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