PBSS4160DS,115

NXP  PBSS4160DS,115  双极晶体管阵列, NPN, 60 V, 420 mW, 1 A, 500 hFE, SOT-457

The is a dual NPN breakthrough small signal BISS Bipolar Transistor Array in a surface-mount plastic package. It is suitable for dual low power switch applications. It utilizes required smaller printed-circuit board PCB area than for conventional transistors.

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Low collector-emitter saturation voltage VCEsat

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High collector current capability IC and ICM

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High collector current gain hFE at high IC

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High efficiency due to less heat generation

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PBSS5160DS dual PNP complement