MUN5335DW1T2G

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT"s within? Look no further than the npn and PNP digital transistor from . This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.