IPC302N20N3X1SA1

IPC302N20N3X1SA1概述

N-CH 200V

Description:

With OptiMOS™ 200V and 250V continues to deliver best-in-class on-state resistance R DSon power MOSFETs with unique performance. The leading R DSon and figure of merit FOM characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as lighting for 110V AC networks, HID lamps, DC-DC converters and power over ethernet PoE.

Summary of Features:

.
„Industry’s lowest R DSon
.
„Lowest Q g and Q gd
.
„World’s lowest FOM

Benefits:

.
Highest efficiency
.
„Highest power density
.
„Lowest board space consumption
.
„Less paralleling required
.
„System cost improvement
.
„Easy-to-design products
.
„Environmentally friendly
IPC302N20N3X1SA1数据文档
型号 品牌 下载
IPC302N20N3X1SA1

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