M29W400DB70N6E

MICRON  M29W400DB70N6E  闪存, 引导块, 非, 4 Mbit, 512K x 8位 / 256K x 16位, 并行, TSOP, 48 引脚

The is a 4MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

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Access time - 70ns

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Programming time - 10µs per byte/word typical

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Program/erase controller - embedded byte/word program algorithms

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Erase suspend and resume modes - read and program another block during erase suspend

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Unlock bypass program command - Faster production/batch programming

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Temporary block unprotection mode

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Low power consumption - standby and automatic standby

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100000 Program/erase cycles per block

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Electronic signature