VND7NV04-E

STMICROELECTRONICS  VND7NV04-E  晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V

The is a 55V Fully Auto Protected Power MOSFET made using VIPower™ M0 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

.

Linear current limitation

.

Thermal shutdown

.

Short-circuit protection

.

Integrated clamp

.

Low current drawn from input pin

.

Diagnostic feedback through input pin

.

ESD protection

.

Direct access to the gate of the power MOSFET analogue driving

.

Compatible with standard power MOSFET

ESD sensitive device, take proper precaution while handling the device.