STD11NM60N

STD11NM60N概述

N沟道600V - 0.37ohm -10A - TO- 220 , TO- 220FP- IPAK - DPAK第二代的MDmesh功率MOSFET N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description

This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

General features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistancel

Applications

■ Switching application

STD11NM60N数据文档
型号 品牌 下载
STD11NM60N

ST Microelectronics 意法半导体

下载
STD15NF10

ST Microelectronics 意法半导体

下载
STD1805-1

ST Microelectronics 意法半导体

下载
STD15NF10T4

ST Microelectronics 意法半导体

下载
STD1NK60T4

ST Microelectronics 意法半导体

下载
STD1NK80ZT4

ST Microelectronics 意法半导体

下载
STD1802T4-A

ST Microelectronics 意法半导体

下载
STD110N02RT4G

ON Semiconductor 安森美

下载
STD10NM50N

ST Microelectronics 意法半导体

下载
STD150NH02LT4

ST Microelectronics 意法半导体

下载
STD100NH03LT4

ST Microelectronics 意法半导体

下载

锐单商城 - 一站式电子元器件采购平台