FDG6306P

FAIRCHILD SEMICONDUCTOR  FDG6306P  双路场效应管, MOSFET, 双P沟道, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -12V 最大漏极电流IdDrain Current| -600mA/-0.6A 源漏极导通电阻RdsDrain-Source On-State Resistance| 630mΩ@ VGS = -2.5V, ID = -500mA 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.6~-1.5V 耗散功率PdPower Dissipation| 300mW/0.3W Description & Applications| P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Semiconductor’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V. Applications · Battery management · Load switch Features · Low gate charge · High performance trench technology for extremely low RDSON · Compact industry standard SC70-6 surface mount package 描述与应用| P沟道2.5V额定功率沟道MOSFET 概述    此P沟道2.5V指定MOSFET是一种坚固的门版本飞兆半导体先进的功率沟槽过程。它已被优化的电源管理应用广泛的栅极驱动电压（2.5V - 12V）。 应用 ·电池管理 ·负荷开关 特点 ·低栅极电荷 ·高性能沟槽技术非常低的RDS（ON） ·紧凑型工业标准SC70-6表面贴装封装