SIHU5N50D-GE3

VISHAY  SIHU5N50D-GE3  晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V

The is a D series N-channel enhancement-mode Power MOSFET suitable for consumer electronics, telecom power supply and battery charger applications.

.

Low area specific ON-resistance

.

Low input capacitance CISS

.

Reduced capacitive switching losses

.

High body diode ruggedness

.

Avalanche energy rated UIS

.

Simple gate drive circuitry

.

Low figure-of-merit FOM Ron x Qg

.

Fast switching

.

Halogen-free