NXP PHC21025,118. 场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC
The is an intermediate level N-channel and P-channel complementary pair enhancement-mode FET in a plastic package using vertical D-MOS technology. It is designed and qualified for use in computing, synchronized rectification, motor and actuator driver applications.